FDS3580 查看數據表（PDF） - Fairchild Semiconductor
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FDS3580 Datasheet PDF : 8 Pages
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Typical Characteristics (continued)
10
ID = 7.6A
8
6
VDS = 10V
20V
40V
4
2
0
0
5
10
15
20
25
30
35
Qg, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = 10V
0.1
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
2400
2000
1600
CISS
f = 1MHz
VGS = 0 V
1200
800
400
COSS
CRSS
0
0
10
20
30
40
50
60
70
80
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
SINGLE PULSE
RθJA =125°C/W
TA = 25°C
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100 300
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0 .0 0 5
D = 0.5
0.2
0.1
0 0. 5
0 0. 2
0.0 1
S i n g le P ul se
0 .0 0 2
0 .0 0 1
0 .00 0 1
0 .0 0 1
0.01
0.1
1
t 1, TIME (s e c )
R θJ A (t) = r(t) * R θJ A
R θJ A= 125°C /W
P(p k )
t1
t2
TJ - TA = P * RθJA ( t)
D u t y C y c l e, D = t 1 /t2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDS3580 Rev. B
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