BF1109 查看數據表（PDF） - Philips Electronics

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产品描述 (功能)

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BF1109

N-channel dual-gate MOS-FETs

Philips Electronics 

Philips Semiconductors

N-channel dual-gate MOS-FETs

Product specification

BF1109; BF1109R; BF1109WR

25

handbook, halfpage

ID

(mA)

20

15

10

5

0

0

2

MDA613

VG1 = 1.6 V

1.5 V

1.4 V

1.3 V

1.2 V

1.1 V

1V

4

6

8

10

VDS (V)

VG2-S = 4 V.

Tj = 25 °C.

Fig.5 Output characteristics; typical values.

handbook,4h0alfpage

ID

(mA)

30

20

10

0

0

0.5

MDA614

VG2-S = 4 V 3.5 V

3V

2.5 V

2V

1.5 V

1V

1

1.5

2

2.5

VG1 (V)

VDS = 9 V.

Tj = 25 °C.

Fig.6 Transfer characteristics; typical values.

handbook,4h0alfpage

yfs

(mS)

30

20

MDA615

VG2-S = 4 V

3.5 V

3V

10

0

0

2.5 V

2V

10

20 ID (mA) 30

VDS = 9 V.

Tj = 25 °C.

Fig.7 Forward transfer admittance as a function

of drain current; typical values.

handbook,1h6alfpage

ID

(mA)

12

8

4

(1) (2) (3)

(4)

MDA616

0

0

1

2

3

(1) VDS = 9 V.

(2) VDS = 7 V.

(3) VDS = 5 V.

(4) VDS = 3 V.

4

5

VG2-S (V)

Fig.8 Drain current as a function of gate 2

voltage; typical values.

1997 Dec 08

5

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