D1NB80-1 查看數據表（PDF） - STMicroelectronics
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D1NB80-1 Datasheet PDF : 5 Pages
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STD1NB80-1
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 400 V ID = 0.5A
RG = 4.7 Ω
VGS = 10 V
Min.
Typ.
8
10
Max.
12
14
Unit
ns
ns
Qg
Total Gate Charge
VDD = 640 V ID =1.1 A VGS = 10 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
10
14
nC
5
nC
4
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 640 V ID = 1.1 A
RG = 4.7 Ω VGS = 10 V
Min.
Typ.
40
15
50
Max.
56
21
70
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 1 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 1.1 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
1
4
Unit
A
A
1.6
V
460
ns
1150
nC
5
A
3/5
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