STB16NF06L(2006) 查看數據表（PDF） - STMicroelectronics

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STB16NF06L
(Rev.:2006)

N-channel 60V - 0.07Ω - 16A - D2PAK STripFET™ Power MOSFET

STMicroelectronics 

STB16NF06L

Electrical characteristics

Table 5. Source drain diode

Symbol

Parameter

Test conditions

Min.

ISD

ISDM (1)

Source-drain current

Source-drain current

(pulsed)

VSD (2) Forward on voltage

ISD = 16A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time ISD = 16A, di/dt = 100A/µs,

Reverse recovery charge VDD = 16V, Tj = 150°C

Reverse recovery current (see Figure 14)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Typ.

50

67.5

2.7

Max. Unit

16

A

64

A

1.3 V

ns

nC

A

5/13

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