STB5NB60 查看數據表（PDF） - STMicroelectronics

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STB5NB60

N - CHANNEL 600V - 1.8Ω - 5A - I2PAK/D2PAK PowerMESH™ MOSFET

STMicroelectronics 

®

STB5NB60

N - CHANNEL 600V - 1.8Ω - 5A - I2PAK/D2PAK

PowerMESH™ MOSFET

TYPE

ST B5N B60

VDSS

RDS(on)

ID

600 V < 2.0 Ω

5A

s TYPICAL RDS(on) = 1.8 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s VERY LOW INTRINSIC CAPACITANCES

s GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

123

3

1

I2PAK

TO-262

(suffix ”-1”)

D2PAK

TO-263

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Sy mb o l

Parameter

VDS Drain-source Voltage (VGS = 0)

V DGR

VGS

ID

ID

IDM (•)

Ptot

Drain- gate Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

Value

600

600

± 30

5

3.1

20

100

0.8

4.5

-65 to 150

150

( 1) ISD ≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Un it

V

V

V

A

A

A

W

W /o C

V/ns

oC

oC

January 2000

1/9

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