STW45NM50FD(2002) 查看數據表（PDF） - STMicroelectronics
零件编号
产品描述 (功能)
生产厂家
STW45NM50FD
(Rev.:2002)
(Rev.:2002)
STMicroelectronics
STW45NM50FD Datasheet PDF : 8 Pages
| |||
STW45NM50FD
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 250V, ID = 22.5A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDD = 400V, ID = 45A,
VGS = 10V
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 400V, ID = 45A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
Min. Typ. Max. Unit
28
ns
28
ns
92
120
nC
22
nC
40
nC
Min. Typ. Max. Unit
11
ns
25
ns
44
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
Source-drain Current
45
A
ISDM (2) Source-drain Current (pulsed)
180
A
VSD (1) Forward On Voltage
ISD = 45A, VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 45A, di/dt = 100A/µs,
VDD = 100V
(see test circuit, Figure 5)
245
ns
2.2
µC
18
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
Safe Operating Area
Thermal Impedence
3/8
Share Link: 