STB160NF03L 查看數據表（PDF） - STMicroelectronics
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STB160NF03L Datasheet PDF : 9 Pages
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ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off-Delay Time
Fall Time
td(off)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 15V, ID = 80A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
VDD = 24V, ID = 160A,
VGS = 10V
Test Conditions
VDD = 15V, ID = 80A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Vclamp =24V, ID =40A
RG = 4.7Ω, VGS = 10V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (1) Source-drain Current (pulsed)
VSD (2) Forward On Voltage
ISD = 160A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 80A, di/dt = 100A/µs,
VDD = 15V, Tj = 25°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STB160NF03L
Min. Typ. Max. Unit
28
ns
285
ns
123
nC
21
nC
40
nC
Min.
Typ.
110
65
Max.
Unit
ns
ns
110
ns
35
ns
70
ns
Min. Typ. Max. Unit
160
A
640
A
1.3
V
80
ns
180
nC
4.5
A
Safe Operating Area
Thermal Impedance
3/9
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