STB80NF10T4 查看數據表（PDF） - STMicroelectronics

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STB80NF10T4

N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PAK low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

STB80NF10

STP80NF10

N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PAK

low gate charge STripFET™ II Power MOSFET

Features

Type

STP80NF10

STB80NF10

VDSS

100 V

100 V

RDS(on)

max

< 0.015 Ω

< 0.015 Ω

■ Exceptional dv/dt capability

■ 100% Avalanche tested

■ Application oriented characterization

ID

80 A

80 A

Applications

■ Switching applications

Description

This Power MOSFET series realized with

STMicroelectronics unique STripFET process has

specifically been designed to minimize input

capacitance and gate charge. It is therefore

suitable as primary switch in advanced high-

efficiency isolated DC-DC converters for telecom

and computer application. It is also intended for

any application with low gate charge drive

requirements.

3

2

1

TO-220

3

1

D²PAK

Figure 1. Internal schematic diagram

Table 1. Device summary

Order codes

Marking

STP80NF10

P80NF10@

STB80NF10T4

B80NF10@

Package

TO-220

D²PAK

Packaging

Tube

Tape and reel

April 2009

Doc ID 6958 Rev 18

1/14

www.st.com

14

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