R/C
tHRH
tDS
STATUS
tC
tDDR
tHDR
DB11 - DB0 HIGH–Z DATA VALID
HIGH–Z
HIGH PULSE FOR R/C DYNAMIC CHARACTERISTICS
VCC = +15V; VLOGIC = +5V; TA = 25°C
PARAMETER
MIN.
tHRH High R/C Pulse Width
25
tDS STATUS Delay from R/C
tC Conversion Time
13
tDDR Data Access Time
tHDR Data Valid after R/C Low 25
TYP.
MAX.
200
25
150
UNIT
ns
ns
µs
ns
ns
CONDITIONS
TMIN to TMAX
Figure 5. High Pulse for R/C — Outputs Enabled While R/C is High, Otherwise High Impedance
MA0 - MA2
R/C
tMDS
tMDH
tHRL
tDS
STATUS
tC
tHDR
DB11 - DB0 DATA VALID
tHS
DATA VALID
LOW PULSE FOR R/C DYNAMIC CHARACTERISTICS
VCC = +15V; VLOGIC = +5V; TA = 25°C
PARAMETER
MIN.
tHRL Low R/C Pulse Width
50
tDS Status Delay from R/C
tHDR Data Valid after R/C
25
tHS Status Delay after Data Valid 500
tMDS MUX Data Setup
50
tMDH MUX Data Valid
3
Figure 6. Low Pulse for R/C
TYP. MAX.
200
10
UNIT
ns
ns
ns
ns
ns
µs
CONDITIONS
SP8121DS/02
SP8121 Monolithic, 12-Bit Data Acquisition System
8
© Copyright 2000 Sipex Corporation