BLS3135-65 查看數據表（PDF） - Philips Electronics
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BLS3135-65 Datasheet PDF : 12 Pages
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Philips Semiconductors
Microwave power transistor
Product specification
BLS3135-65
100
handbook, halfpage
PL
(W)
80
60
40
MCD750
(1)
(2)
(3)
20
0
4
6
8
10
12
PD (W)
VCB = 40 V; class-C; tp = 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
Fig.2 Load power as a function of the drive power;
typical values.
10
handbook, halfpage
Gp
(dB)
8
6
4
MCD751
(1)
(2)
(3)
2
0
0
20
40
60
80
100
PL (W)
VCB = 40 V; class-C; tp = 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
Fig.3 Power gain as a function of load power;
typical values.
handbook,5h0alfpage
ηC
(%)
40
30
20
MCD752
(1)
(3) (2)
10
0
0
20
40
60
80
100
PL (W)
VCB = 40 V; class-C; tp = 100 µs; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
Fig.4 Collector efficiency as a function of load
power; typical values.
1999 Aug 16
4
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