BLS3135-65 查看數據表（PDF） - Philips Electronics

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BLS3135-65

Microwave power transistor

Philips Electronics 

Philips Semiconductors

Microwave power transistor

Product specification

BLS3135-65

FEATURES

• Suitable for short and medium pulse applications

• Internal input and output matching networks for an easy

circuit design

• Emitter ballasting resistors improve ruggedness

• Gold metallization ensures excellent reliability

• Interdigitated emitter-base structure provides high

emitter efficiency

• Multicell geometry improves power sharing and reduces

thermal resistance.

APPLICATIONS

• Common base class-C pulsed power amplifiers for radar

applications in the 3.1 to 3.5 GHz band.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in

a 2-lead rectangular flange package with a ceramic cap

(SOT422A) with the common base connected to the

flange.

PINNING - SOT422A

PIN

DESCRIPTION

1

collector

2

emitter

3

base; connected to flange

handbook, halfpage

3

1

3

2

MBK051

Fig.1 Simplified outline.

QUICK REFERENCE DATA

RF performance at Th = 25 °C in a common base class-C test circuit.

MODE OF OPERATION

f

(GHz)

VCB

(V)

PL

(W)

Pulsed, class-C

3.1 to 3.5

40

65

Gp

ηC

(dB)

(%)

≥7

≥35

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

1999 Aug 16

2

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