NESG2031M05 查看數據表（PDF） - Renesas Electronics
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NESG2031M05
Renesas Electronics
NESG2031M05 Datasheet PDF : 14 Pages
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NESG2031M05
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
200
175
150
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.3
f = 1 MHz
0.2
100
0.1
50
0
25 50 75 100 125 150
Ambient Temperature TA (˚C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
1
0.1
0.01
0.001
0.0001
0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 3 V
10
1
0.1
0.01
0.001
0.0001
0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base to Emitter Voltage VBE (V)
Remark The graph indicates nominal characteristics.
0
2
4
6
8
10
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
10
1
0.1
0.01
0.001
0.0001
0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
200 μA
30
180 μA
160 μA
25
140 μA
120 μA
20
100 μ A
15
80 μA
60 μA
10
40 μA
5
IB = 20 μA
0
1
2
3
4
5
6
Collector to Emitter Voltage VCE (V)
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
Page 3 of 12
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