2SK2498 查看數據表（PDF） - VBsemi Electronics Co.,Ltd
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2SK2498 Datasheet PDF : 7 Pages
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2SK2498
N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
60
RDS(on) ()
0.005 at VGS = 10 V
0.008 at VGS = 4.5 V
ID (A)a
100
95
FEATURES
• 175 °C Junction Temperature
• TrenchFET® Power MOSFET
• Material categorization:
TO-220 FULLPAK
D
GDS
Top View
G
S
N-Channel MOSFET
www.VBsemi.tw
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C
TC = 100 °C
ID
100
95a
Pulsed Drain Current
IDM
300
A
Continuous Source Current (Diode Conduction)
IS
70a
Avalanche Current
IAS
50
Single Avalanche Energy (Duty Cycle 1 %)
L = 0.1 mH
EAS
125
mJ
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
PD
136
3b, 8.3b, c
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t 10 s.
t 10 sec
Steady State
Symbol
RthJA
RthJC
Typical
15
40
0.85
Maximum
18
50
1.1
Unit
°C/W
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