CHT4401SPT 查看數據表（PDF） - CHENMKO CO., LTD.
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CHT4401SPT Datasheet PDF : 4 Pages
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RATING CHARACTERISTIC CURVES ( CHT4401SPT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
200
UNIT
°C/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
PARAMETER
CONDITIONS
MIN.
collector cut-off current
IE = 0; VCB = 60 V
−
emitter cut-off current
IC = 0; VEB = 6 V
−
DC current gain
VCE = 1 V; note 1
IC = 0.1 mA
20
IC = 1 mA
40
IC = 10 mA
80
IC = 1 50 mA
100
VCE = 2 V;note 2
IC = 500 mA
40
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
IC = 150 mA; IB = 1 5 mA
−
IC = 500 mA; IB = 5 0 mA
−
IC = 150 mA; IB = 15 mA
750
IC = 500 mA; IB = 5 0 mA
−
IE = ie = 0; VCB = 5 V; f = 1 4 0 K Hz −
IC = ic = 0; VBE = 500 mV;
−
f = 140KHz
transition frequency
IC = 20 mA; VCE = 10 V;
250
f = 100 MHz
MAX.
50
50
−
−
−
300
−
400
750
950
1200
6.5
30
−
UNIT
nA
nA
mV
mV
mV
mV
pF
pF
MHz
Switching times (between 10% and 90% levels);
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = 150 mA; IBon = 15 mA;
−
IBoff = −1 5 mA
−
−
−
−
−
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
35
ns
15
ns
20
ns
250
ns
200
ns
60
ns
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