MJE13007V9 查看數據表（PDF） - Foshan Blue Rocket Electronics Co.,Ltd.

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产品描述 (功能)

生产厂家

MJE13007V9

Silicon NPN Transistor in a TO-3P Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

MJE13007V9

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

PC

PC(Tc=25℃ )

Tj

Tstg

DATA SHEET

数值

Rating

700

400

9.0

8.0

2.0

80

150

-55～150

单位

Unit

V

V

V

A

W

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

符号

Symbol

Collector to Base Voltage

VCBO

Collector to Emitter Voltage

VCEO

Emitter to Base Voltage

VEBO

Collector Cut-Off Current

ICBO

Collector cut-off current

ICEO

Emitter Base Cut-Off Current

IEBO

DC Current Gain

Collector to Emitter Saturation

Voltage

hFE

VCE(sat)

Base to Emitter Saturation Voltage VBE(sat)

Transition Frequency

fT

Fall time

tf

Storage time

tS

测试条件

Test Conditions

IC=1mA

IE=0

IC=10mA IB=0

IE=1mA

IC=0

VCB=700V IE=0

VCE=400V IB=0

VEB=9.0V IC=0

VCE=5.0V IC=2.0A

IC=5.0A

IB=1.0A

IC=5.0A

VCE=10V

f=1.0MHz

IB=1.0A

IC=0.5A

VCE=5V

(UI9600)

IC=0.5A

最小值 典型值 最大值 单位

Min Typ Max Unit

700

V

400

V

9.0

V

0.1 mA

0.1 mA

0.1 mA

10

40

0.9 V

1.5 V

8.0

MHz

0.6 μs

3.0

9.0 μs

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