SS8050 查看數據表（PDF） - Shanghai Leiditech Electronic Technology Co., Ltd

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SS8050

General Purpose Transistors NPN Silicon

Shanghai Leiditech Electronic Technology Co., Ltd 

SS8050

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO

25

–

(IC=1.0mA)

Emitter-Base Breakdown Voltage

(IE=100µΑ)

V(BR)EBO

5

–

Collector-Base Breakdown Voltage

(IC=100µΑ)

Collector Cutoff Current (VCB=35V)

V(BR)CBO

40

–

ICBO

–

–

Emitter Cutoff Current (VEB=4V)

IEBO

–

–

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

ON CHARACTERISTICS

DC Current Gain

IC=100mA,VCE=1V

hFE

100

-

Collector-Emitter Saturation Voltage

(IC=800mA IB=80mA)

VCE(S)

-

-

NOTE :

*

P

hF E

100~200

Q

150~300

R

200~400

S

300~600

Max

Unit

–

V

–

V

–

V

150

nA

150

nA

Max

Unit

600

0.5

V

Rev : 01.06.2015

2/3

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