SS8050
Silicon Epitaxial Planar Transistor
FEATURES
1. BASE
2. EMITTER
3. COLLECTOR
z Collector Current.(IC= 1.5A)
z Complementary To SS8550.
z Collector dissipation:PC=300mW(TC=25℃)
APPLICATIONS
z High Collector Current.
A
K
D
G
C
E
B
J
H
SOT-23
Dim
Min
Max
A
2.70
3.10
B
1.10
1.50
C
1.0 Typical
D
0.4 Typical
E
0.35
0.48
G
1.80
2.00
H
0.02
0.1
J
0.1 Typical
K
2.20
2.60
All Dimensions in mm
ORDERING INFORMATION
Type No.
Marking
SS8050
Y1
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Ratings
VCBO
VCEO
VEBO
IC
PC
Tj,Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
40
25
6
1.5
300
-55 to +150
Units
V
V
V
A
mW
℃
Revision:20170701-P1
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