BU508D 查看數據表（PDF） - Thinki Semiconductor Co., Ltd.
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BU508D Datasheet PDF : 5 Pages
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BU508A/BU508D
BU508A/BU508D
Pb
Pb Free Plating Product
NPN TYPE TRIPLE DIFFUSED SILICON POWER TRANSISTORS
Features
※ Collector-Emitter Sustaining Voltage-Vcex=1500V(min.)
※ Stable performances versus operating TEMP variation
※ No Damper Diode
※ Low base-drive requirement
※ High ruggedness
Application
※ Large screen colour deflection circuits.
※ Ultrasonic equipment system
※ Plating Power Supply,Motor Control,UPS and SMPS etc.
Mechanical Data
※ Case:TO-3P non-isolated package
※ Epoxy: UL 94V-0 rate flame retardant
※ Terminals: Solderable per MIL-STD-202 method 208
※ Polarity: As per configuration
※ Mounting position: Any
※ Weight: 6.0 gram approximately
Maximum Ratings
TO-3P pkg outline & internal configuration
COLLECTOR
BASE
EMITTER
Characteristic
Symbol
Rating
Unit
Collector-Emitter Voltage
Collector-Emitter Voltage (VBE = 0)
Emitter-Base Voltage
VCEO
700
VCES
1500
V
VEBO
5.0
Collector Current-Continuous
-Peak
Base Current-Continuous
IC
5.0
8.0
A
IB
2.5
Total Power Dissipation at TC = 25°C
Derate above 25°C
PD
125
W
1.0
W/°C
Operating and Storage Junction Temperature Range
TJ, TSTG
-65 to +150
°C
Thermal Characteristics
Characteristic
Symbol Maximum
Unit
Thermal Resistance Junction to Case
Rθjc
1.0
°C/W
Rev.10C
© 2006 Thinki Semiconductor Co., Ltd.
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