BTA312X-600D(2014) 查看數據表（PDF） - NXP Semiconductors.

零件编号

产品描述 (功能)

生产厂家

BTA312X-600D
(Rev.:2014)

3Q Hi-Com Triac

NXP Semiconductors. 

BTA312X-600D

3Q Hi-Com Triac

29 May 2014

Product data sheet

1. General description

Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full

pack" plastic package. The "series D" triac balances the requirements of commutation

performance and gate sensitivity. This "very sensitive gate" "series D" is intended for

interfacing with low power drivers including microcontrollers.

2. Features and benefits

• 3Q technology for improved noise immunity

• Direct interfacing with low power drivers and microcontrollers

• Good immunity to false turn-on by dV/dt

• High commutation capability with very sensitive gate

• High voltage capability

• Isolated mounting base package

• Planar technology for voltage ruggedness and reliability

• Very sensitive gate for easy logic level triggering

3. Applications

• Electronic thermostats (heating and cooling)

• High power motor controls e.g. washing machines and vacuum cleaners

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

VDRM

repetitive peak off-

state voltage

ITSM

non-repetitive peak on- full sine wave; Tj(init) = 25 °C;

state current

tp = 20 ms; Fig. 4; Fig. 5

IT(RMS)

RMS on-state current full sine wave; Th ≤ 59 °C; Fig. 1; Fig. 2;

Fig. 3

Static characteristics

IGT

gate trigger current

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 7

Min Typ Max Unit

-

-

600 V

-

-

100 A

-

-

12

A

-

-

5

mA

-

-

5

mA

Scan or click this QR code to view the latest information for this product

Share Link: