P0550ETFS 查看數據表（PDF） - Unspecified

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P0550ETFS

N-Channel Enhancement Mode MOSFET

Unspecified 

P0550ETF / P0550ETFS

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V(BR)DSS

VGS(th)

IGSS

VGS = 0V, ID = 250mA

VDS = VGS, ID = 250mA

VDS = 0V, VGS = ±30V

500

2

3

4

±100

Gate Voltage Drain Current

Drain-Source On-State

Resistance1

IDSS

RDS(ON)

VDS = 500V, VGS = 0V,TC = 25 °C

VDS = 400V, VGS = 0V , TC = 100 °C

VGS = 10V, ID = 2.5A

1

10

1.15 1.55

Forward Transconductance1

gfs

VDS = 10V, ID = 2.5A

6.8

DYNAMIC

Input Capacitance

Ciss

565

Output Capacitance

Coss

VGS = 0V, VDS = 25V, f = 1MHz

71

Reverse Transfer Capacitance

Crss

12

Total Gate Charge2

Qg

18

Gate-Source Charge2

Qgs

VDD =400V, VGS = 10V, ID = 5A

3

Gate-Drain Charge2

Qgd

7.2

Turn-On Delay Time2

td(on)

15

Rise Time2

tr

VDD = 300V, ID = 5A,

24

Turn-Off Delay Time2

td(off)

RG= 25Ω

74

Fall Time2

tf

37

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current3

IS

5

Forward Voltage1

VSD

IF = 5A, VGS = 0V

1

Reverse Recovery Time

Reverse Recovery Charge

trr

Qrr

IF = 5A, dlF/dt = 100A / mS

226

1.7

1Pulse test : Pulse Width  380 msec, Duty Cycle  2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

UNITS

V

nA

mA

Ω

S

pF

nC

nS

A

V

nS

uC

REV 1.0

2

2015/6/11

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