S-LBSS123LT1G 查看數據表（PDF） - Leshan Radio Company,Ltd

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S-LBSS123LT1G

N-CHANNEL POWER MOSFET

Leshan Radio Company,Ltd 

LESHAN RADIO COMPANY, LTD.

LBSS123LT1G , S-LBSS123LT1G

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 250 µAdc)

V(BR)DSS 100

–

–

Vdc

Zero Gate Voltage Drain Current

(VGS = 0, VDS = 100 Vdc) TJ = 25°C

TJ = 125°C

IDSS

–

–

µAdc

–

15

–

60

Gate–Body Leakage Current

(VGS = 20 Vdc, VDS = 0)

IGSS

–

–

50

nAdc

ON CHARACTERISTICS (Note 4.)

Gate Threshold Voltage

(VDS = VGS, ID = 1.0 mAdc)

VGS(th)

0.8

–

2.0

Vdc

Static Drain–Source On–Resistance

(VGS = 10 Vdc, ID = 100 mAdc)

rDS(on)

–

5.0

6.0

Ω

Forward Transconductance

(VDS = 25 Vdc, ID = 100 mAdc)

gfs

80

–

–

mmhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Ciss

–

20

–

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Coss

–

9.0

–

pF

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

SWITCHING CHARACTERISTICS(4)

Crss

–

4.0

–

pF

Turn–On Delay Time

Turn–Off Delay Time

REVERSE DIODE

(VCC = 30 Vdc, IC = 0.28 Adc,

td(on)

–

20

–

ns

VGS = 10 Vdc, RGS = 50 Ω)

td(off)

–

40

–

ns

Diode Forward On–Voltage

(ID = 0.34 Adc, VGS = 0 Vdc)

4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

VSD

–

–

1.3

V

Rev .A 2/4

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