XL/ML1225
SCR
ABSOLUATE MAXIUM RATINGS (Ta= 25C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Repetitive Peak Off-State Voltage
(TJ =40 ~ 125C, RGK =1kΩ )
XL1225
ML1225
VDRM
400
300
V
On-State Current (Tc=40C)
IT(RMS)
0.8
A
Average On-State Current (Half Cycle=180,Tc=40C)
IT(AV)
0.5
A
Peak Reverse Gate Voltage (IGR=10A)
VGRM
1
V
Peak Gate Current (10s Max.)
IGM
0.1
A
Gate Dissipation (20ms Max.)
Junction Temperature
PG(AV)
TJ
150
+125
mW
C
Storage Temperature
TSTG
-40 ~ +150
C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range
and assured by design from –20C ~85C.
ELECTRICAL CHARACTERISTICS (Ta= 25C, unless otherwise specified.)
PARAMETER
Off State Leakage Current
Off State Leakage Current
On State Voltage
On State Threshold Voltage
On State Slops Resistance
Gate Trigger Current
Gate Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
Critical Rate of Current Rise
Gate Controlled Delay Time
Commutated Turn-off Time
SYMBOL
IDRM
IDRM
VT
VT(TO)
Rt
IGT
VGT
IH
IL
DV/DT
DV/DT
TGD
TG
TEST CONDITIONS
VDRM(RGK=1KΩ), TJ =125C
VDRM(RGK=1KΩ), TJ =25C
AT IT=0.4A
AT IT=0.8A
TJ =125C
TJ =125C
VD=7V
VD=7V
RGK=1KΩ
RGK=1KΩ
VD=0.67×VDRM(RGK=1KΩ),TJ =125C
IG=10mA, dIG/dt=0.1A/μs,TJ =125C
IG=10mA, dIG/dt=0.1A/μs
TJ =85C, VD=0.67*VDRM, VR=35V,
IT=IT(AV)
CLASSIFICATION OF IGT
RANK
RANGE
B
50-100
C
100-200
AA
8-15
AB
15-20
MIN TYP MAX UNIT
0.1 mA
1.0 μA
1.4
2.2
V
0.95 V
600 m
200 μA
0.8 V
5 mA
6 mA
V/μs
A/μs
2.2 μs
200 μs
AC
20-25
AD
25-50
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R301-003.G