SI7411DN-T1-E3 查看數據表（PDF） - Vishay Semiconductors
零件编号
产品描述 (功能)
生产厂家
SI7411DN-T1-E3 Datasheet PDF : 6 Pages
| |||
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
4000
Si7411DN
Vishay Siliconix
0.08
0.06
3200
Ciss
2400
0.04
0.02
0.00
0
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
5
10
15
20
25
30
ID - Drain Current (A)
On-Resistance vs. Drain Current
5
VDS = 10 V
4
ID = 11.4 A
3
2
1
0
0
5
10
15
20
25
30
Qg - Total Gate Charge (nC)
Gate Charge
60
TJ = 150 °C
10
TJ = 25 °C
1600
800
Crss
0
0
4
Coss
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
1.5
1.4
VGS = 4.5 V
ID = 11.4 A
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.10
0.08
0.06
0.04
ID = 2.9 A
ID = 11.4 A
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72399
S-83051-Rev. E, 29-Dec-08
www.vishay.com
3
Share Link: 