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UPS120E3 查看數據表(PDF) - Microsemi Corporation

零件编号
产品描述 (功能)
生产厂家
UPS120E3
Microsemi
Microsemi Corporation 
UPS120E3 Datasheet PDF : 4 Pages
1 2 3 4
UPS120e3
Schottky Barrier Rectifier
Characteristics
Static Electrical Characteristics
Symbol
VF(2)
IR(2)
CT
Parameter
Maximum forward voltage
Maximum instantaneous
reverse current
Junction capacitance
Test Conditions
TJ = 25ºC
TJ = 85ºC
TJ = 25ºC
TJ = 85ºC
IF = 0.1 A
IF = 1.0 A
IF = 3.0 A
IF = 0.1 A
IF = 1.0 A
IF = 3.0 A
VR = 20V
VR = 10V
VR = 20V
VR = 10V
VR = 5V, f = 1MHz
(2) Measured with a test pulse of 380µs to minimize self-heating effect
Thermal Characteristics
Typ
max
0.34
0.45
0.65
0.25
0.415
0.67
0.40
0.10
25
18
80
Units
V
mA
pF
Symbol
Parameter
RΘJC
RΘJA
Junction to case (bottom)
Junction to ambient(3)
(3) Mounted on FR-4 PC board using 1oz copper with recommended minimum foot print
Value
15
240
Unit
ºC/W
ºC/W
Reverse power dissipation and the possibility of thermal runaway
must be considered when operating this device under any
reverse voltage conditions. Calculations of TJ therefore must
include forward and reverse power effects. The allowable
operating TJ may be calculated from the equation:
TJ = TJ max = r(t)(Pf+Pr) where
r(t) = thermal impedance under given conditions.
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the de-rated allowable TJ due to reverse bias
under DC conditions only and is calculated as TJ = TJ max-r(t) Pr,
Where r(t)=Rthja. For other power applications further
calculations must be performed.
Copyright © 2008
www.Microsemi.com
2/4
June 2008 Rev E

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