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DTC143ZM3T5G(2012) 查看數據表(PDF) - ON Semiconductor

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DTC143ZM3T5G
(Rev.:2012)
ON-Semiconductor
ON Semiconductor 
DTC143ZM3T5G Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
Thermal Characteristics (SOT1123) (NSBC143ZF3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance, Junction to Lead
Junction and Storage Temperature Range
1. FR4 @ Minimum Pad.
2. FR4 @ 1.0 x 1.0 Inch Pad.
3. FR*4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR*4 @ 500 mm2, 1 oz. copper traces, still air.
Symbol
Max
Unit
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 3)
PD
RqJA
RqJL
TJ, Tstg
254
297
2.0
2.4
493
421
193
55 to +150
mW
mW/°C
°C/W
°C/W
°C
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
CollectorBase Cutoff Current
(VCB = 50 V, IE = 0)
CollectorEmitter Cutoff Current
(VCE = 50 V, IB = 0)
ICBO
nAdc
100
ICEO
nAdc
500
EmitterBase Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
mAdc
0.18
CollectorBase Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
Vdc
CollectorEmitter Breakdown Voltage (Note 5)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(IC = 5.0 mA, VCE = 10 V)
hFE
80
200
Collector *Emitter Saturation Voltage (Note 5)
(IC = 10 mA, IB = 1.0 mA)
VCE(sat)
Vdc
0.25
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
Vdc
0.6
Input Voltage (on)
(VCE = 0.2 V, IC = 5 mA)
Vi(on)
Vdc
0.9
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
Vdc
0.2
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
Vdc
Input Resistor
R1
3.3
4.7
6.1
kW
Resistor Ratio
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.
R1/R2
0.055 0.1
0.185
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