P3C1256-25JC 查看數據表（PDF） - Semiconductor Corporation

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P3C1256-25JC

HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM

Semiconductor Corporation 

DATA RETENTION CHARACTERISTICS

Symbol

Parameter

VDR

VCC for Data Retention

ICCDR Data Retention Current

tCDR

Chip Deselect to

Data Retention Time

tR†

Operation Recovery Time

*TA = +25°C

§tRC = Read Cycle Time

† This parameter is guaranteed but not tested.

Test Conditons

CE ≥ VCC –0.2V,

VIN ≥ VCC –0.2V

or VIN ≤ 0.2V

DATA RETENTION WAVEFORM

P3C1256

Typ.*

Max

Min

VCC =

VCC =

Unit

2.0V 3.0V 2.0V 3.0V

2.0

V

10

15 600 900 µA

0

ns

tRC§

ns

TSOP PIN CONFIGURATION

Document # SRAM122 REV B

Page 7 of 10

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