VG36641641BT 查看數據表（PDF） - Vanguard International Semiconductor
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VG36641641BT Datasheet PDF : 70 Pages
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VIS
Preliminary
VG36641641BT
CMOS Synchronous Dynamic RAM
2.4 Operative Command Table Notes 1
HCurrent state CS RAS CAS WE Address
Command
Action
(1/3)
Notes
Idle
H X X XX
DESL
Nop or Power down
2
L H H XX
NOP or BST Nop or Power down
2
L H L H BA, CA, A10 READ/READA ILLEGAL
3
L H L L BA, CA, A10 WRIT/WRITA ILLEGAL
3
L L H H BR, RA
ACT
Row active
L L H L BA, A10
PRE/PALL
Nop
L L L HX
REF/SELF
Refresh or Self refresh
4
L L L L Op-Code
MPS
Mode register access
Row active
H X X XX
DESL
Nop
L H H XX
NOP or BST Nop
L H L H BA, CA, A10 READ/READA Begin read : Determine AP
5
L H L L BA, CA, A10 WRIT/WRITA Begin write : Determine AP
5
L L H H BA, RA
ACT
ILLEGAL
3
L L H L BA, A10
PRE/PALL
Precharge
6
L L L HX
REF/SELF
ILLEGAL
L L L L Op-Code
MRS
ILLEGAL
Read
H X X XX
DESL
Continue burst to end → Row active
L H H HX
NOP
Continue burst to end → Row active
L H H LX
BST
Burst stop → Row active
L H L H BA, CA, A10 READ/READA Term burst, new read : Determine AP
7
L H L L BA, CA, A10 WRIT/WRITA Term burst, start write : Determine AP
7,8
L L H H BA, RA
ACT
ILLEGAL
3
L L H L BA, A10
PRE/PALL
Term burst, precharging
L L L HX
REF/SELF
ILLEGAL
L L L L Op-Code
MRS
ILLEGAL
Write
H X X XX
DESL
Continue burst to end → write recovering
L H H HX
NOP
Continue burst to end → write recovering
L H H LX
BST
Burst stop → Row active
L H L H BA, CA, A10 READ/READA Term burst, start read : Determine AP
7,8
L H L L BA, CA, A10 WRIT/WRITA Term burst, new write : Determine AP
7
L L H H BA, RA
ACT
ILLEGAL
3
L L H L BA, A10
PRE/PALL
Term burst, precharging
9
L L L HX
REF/SELF
ILLEGAL
L L L L Op-Code
MRS
ILLEGAL
Document : 1G5-0127
Rev2
Page 10
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