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NE46100 查看數據表(PDF) - NEC => Renesas Technology

零件编号
产品描述 (功能)
生产厂家
NE46100
NEC
NEC => Renesas Technology 
NE46100 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE46100, NE46134
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
VCE = 10 V
10
5
1
0.5
0.2
5
10
50
100
300
Collector Current, IC (mA)
NE46134
TYPICAL OUTPUT
POWER/INTERMODULATION
DISTORTION vs. INPUT POWER
f = 1.0 GHz, VCE = 10 V, IC = 100 mA
2 Tone Test F1 = 1.0 GHz, F2 = 0.99 GHz
40.0
30.0
20.0
10.0
IP3 32.6 dBm
POUT
(Total)
1 Tone
2 Tone
IM3
0.0
IM5
-10.0
-20.0
-30.0
-40.0
-50.0
-5
0
5 10
15 20 25 30
Input Power, PIN Total (dBm)
NE46100, NE46134
INTERMODULATION DISTORTION
vs. COLLECTOR CURRENT
f = 1.0 GHz, VCE = 10 V
0
-10
IM3
-20
IM5
-30
-40
-50
-60
0
40
80
120
160
Collector Current, IC (mA)
2 Tone Test
Total PIN = 12.1 dBm
F1 = 1.0 GHz, F2 = 0.99 GHz
NE46100, NE46134
NE46134
3RD ORDER INTERMODULATION DISTORTION,
2ND ORDER INTERMODULATION DISTORTION
(+ AND -) vs. COLLECTOR CURRENT
80
IM3
70
60
IM2+
IM2-
50
40
0
10
IM3: VO = 110 dBµV/75 2 tone each
f = 2 x 190 MHz - 200 MHz
IM2 +: VO = 105 dBµV/75 2 tone each
f = 90 MHz + 100 MHz
IM2-: VO = 105 dBµV/75 2 tone each
f = 190 MHz - 90 MHz
50
100
300
Collector Current, IC (mA)
NE46134
TYPICAL OUTPUT
POWER/INTERMODULATION
DISTORTION vs. INPUT POWER
f = 1.0 GHz, VCE = 5 V, IC = 100 mA
2 Tone Test F1= 1.0 GHz, F2 = 0.99 GHz
40.0
IP3 32.6 dBm
30.0
1 Tone
2 Tone
20.0
POUT
IM3
10.0
(Total)
0.0
IM5
-10.0
-20.0
-30.0
-40.0
-50.0
-5
0
5 10
15 20 25 30
Input Power, PIN Total (dBm)
NE46100, NE46134
INTERMODULATION DISTORTION vs.
COLLECTOR CURRENT
f = 1.0 GHz, VCE = 5 V
0
-10
-20
-30
-40
-50
0
40
80
120
160
Collector Current, IC (mA)
Total PIN = 6.0 dBm
F1 = 1.0 GHz, F2 = 0.99 GHz
Note: IM5 > than 58 dB down from carrier for
measured currents greater than 40 mA.

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