IXFX24N100Q3 查看數據表（PDF） - IXYS CORPORATION
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IXFX24N100Q3 Datasheet PDF : 5 Pages
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IXFK24N100Q3
IXFX24N100Q3
Fig. 7. Input Admittance
50
45
40
35
30
25
20
TJ = 125ºC
25ºC
15
- 40ºC
10
5
0
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
VGS - Volts
Fig. 8. Transconductance
60
TJ = - 40ºC
50
40
25ºC
30
125ºC
20
10
0
0
5
10 15 20 25 30 35 40 45 50
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
80
70
60
16
14
VDS = 500V
I D = 12A
12
I G = 10mA
Fig. 10. Gate Charge
50
10
40
8
TJ = 125ºC
30
6
TJ = 25ºC
20
4
10
2
0
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
0
VSD - Volts
50
100
150
200
QG - NanoCoulombs
100,000
f = 1 MHz
10,000
Fig. 11. Capacitance
Ciss
Fig. 12. Forward-Bias Safe Operating Area
100
RDS(on) Limit
25µs
10
100µs
1,000
Coss
1
100
Crss
TJ = 150ºC
TC = 25ºC
Single Pulse
10
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.1
10
100
VDS - Volts
1ms
1,000
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