MTDF1C02HD 查看數據表（PDF） - Motorola => Freescale
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MTDF1C02HD Datasheet PDF : 14 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTDF1C02HD/D
™ Designer's Data Sheet
Medium Power Surface Mount Products
Complementary TMOS
Field Effect Transistors
Micro8™ devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process to
achieve lowest possible on–resistance per silicon area. They are
capable of withstanding high energy in the avalanche and commuta-
tion modes and the drain–to–source diode has a very low reverse
recovery time. Micro8™ devices are designed for use in low voltage,
™
high speed switching applications where power efficiency is important.
Typical applications are dc–dc converters, and power management in
portable and battery powered products such as computers, printers,
78
cellular and cordless phones. They can also be used for low voltage
D
motor controls in mass storage products such as disk drives and tape N–Channel
drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional
safety margin against unexpected voltage transients.
2
• Miniature Micro8 Surface Mount Package — Saves Board Space G
• Extremely Low Profile (<1.1mm) for thin applications such as
PCMCIA cards
1S
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
56
• Logic Level Gate Drive — Can Be Driven by Logic ICs
D
• Diode Is Characterized for Use In Bridge Circuits
P–Channel
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
4
G
• Mounting Information for Micro8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Negative sign for P–Channel devices omitted for clarity
3S
MTDF1C02HD
Motorola Preferred Device
COMPLEMENTARY
DUAL TMOS POWER FET
20 VOLTS
RDS(on) = 0.120 OHM
1.7 AMPERES
(N–CHANNEL)
RDS(on) = 0.175 OHM
1.6 AMPERES
(P–CHANNEL)
CASE 846A–02, Style 2
Micro8
Source 1
Gate 1
Source 2
Gate 2
18
27
36
45
Top View
Drain 1
Drain 1
Drain 2
Drain 2
Rating
Symbol
Max
Unit
Drain–to–Source Voltage
W Drain–to–Gate Voltage (RGS = 1.0 M )
N–Channel
P–Channel
N–Channel
P–Channel
VDSS
20
V
20
VDGR
20
V
20
Gate–to–Source Voltage — Continuous
N–Channel
P–Channel
VGS
±8.0
V
±8.0
Operating and Storage Temperature Range
DEVICE MARKING
TJ and Tstg – 55 to 150
°C
CA
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MTDF1C02HD
13″
12 mm embossed tape
4000 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International Rectifier.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMoottoororolal,aInTc.M19O9S7 Power MOSFET Transistor Device Data
1
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