MW7IC2750NBR1 查看數據表（PDF） - NXP Semiconductors.

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MW7IC2750NBR1

RF LDMOS Wideband Integrated Power Amplifiers

NXP Semiconductors. 

Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 160 mA, IDQ2 = 550 mA, 2700 MHz Bandwidth

Pout @ 1 dB Compression Point, CW

P1dB

—

55

—

W

IMD Symmetry @ 50 W PEP, Pout where IMD Third Order

Intermodulation  30 dBc

IMDsym

MHz

—

60

—

(Delta IMD Third Order Intermodulation between Upper and Lower

Sidebands > 2 dB)

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres

—

50

—

MHz

Gain Flatness in 200 MHz Bandwidth @ Pout = 8 W Avg.

Average Deviation from Linear Phase in 200 MHz Bandwidth

@ Pout = 50 W CW

Average Group Delay @ Pout = 50 W CW, f = 2600 MHz

Part--to--Part Insertion Phase Variation @ Pout = 50 W CW,

f = 2600 MHz, Six Sigma Window

GF

—

0.5

—

dB

Φ

—

1.1

—

°

Delay

—

2.3

—

ns

∆Φ

—

38.7

—

°

Gain Variation over Temperature

(--30°C to +85°C)

∆G

—

0.037

—

dB/°C

Output Power Variation over Temperature

(--30°C to +85°C)

∆P1dB

—

0.005

—

dB/°C

Typical Driver Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 160 mA, IDQ2 = 550 mA, Pout = 4 W Avg.,

f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability

on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset.

Power Gain

Gps

—

26

—

dB

Power Added Efficiency

PAE

—

11

—

%

Output Peak--to--Average Ratio @ 0.01% Probability on CCDF

PAR

—

9.2

—

dB

Adjacent Channel Power Ratio

ACPR

—

--57

—

dBc

Input Return Loss

Relative Constellation Error @ Pout = 2.5 W Avg. (1)

1. RCE = 20Log(EVM/100)

IRL

—

--13

—

dB

RCE

—

--39

—

dB

MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1

4

RF Device Data

Freescale Semiconductor, Inc.

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