BFX85 查看數據表（PDF） - Continental Device India Limited

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BFX85

NPN SILICON PLANAR TRANSISTOR

Continental Device India Limited 

NPN SILICON PLANAR TRANSISTOR

BFX85

TO-39

Metal Can Package

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

Base Emitter (Sat) Voltage

SYMBOL

VBE(Sat)

SMALL SIGNAL CHARACTERISTICS

TEST CONDITION

IC=10mA,IB=1.0mA

IC=150mA,IB=15mA

IC=500mA,IB=50mA

IC=1A,IB=100mA

Current Gain Bandwidth Product

Collector Capacitance

Small Signal Current Gain

Input Impedance

Voltage Feedback Ratio

Output Admittance

fT

Cobo

| hfe |

hie

hre

hoe

IC=50mA, VCE=10V

f=35MHz

VCB=10V, IE=0,f=1MHz

IC=1.0mA, VCE=5.0V,

f=1kHz

IC=10mA, VCE=5.0V,

f=1.0kHz

IC=10mA, VCE=5.0V,

f=1.0kHz

IC=10mA, VCE=5.0V,

f=1.0kHz

IC=10mA, VCE=5.0V,

f=1.0kHz

BFX85

MIN MAX

1.2

1.3

1.5

2.0

UNITS

V

V

V

V

50

MHz

12

pF

20

25

750 µmhos

5.0

x10-4

80

µmhos

Continental Device India Limited

Data Sheet

Page 2 of 4

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