Photologic® Reflective Object
Sensor
OPB760, OPB761, OPB762, OPB763 (Series N and T)
OPB770, OPB771, OPB772, OPB773 (Series NZ and TZ)
Electrical Specifications
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Supply Voltage, VCC (not to exceed 3 seconds)
Storage Temperature Range
10 V
-40° C to +85° C
Operating Temperature Range
-40° C to +70° C
Lead Soldering Temperature (1/16” inch (1.6 mm) from case for 5 seconds with soldering iron)(1)
260° C
Input Diode Power Dissipation(2)
100 mW
Output Photologic® Power Dissipation(3)
200 mW
Total Device Power Dissipation(4)
300 mW
Voltage at Output Lead (Open Collector Output)
35 V
Diode Forward DC Current
40 mA
Diode Reverse DC Voltage
3V
Electrical Characteristics (TA = 25°C unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
Input Diode
VF
Forward Voltage
IR
Reverse Current
Output Photologic® Sensor
-
- 1.8
V IF = 40 mA, TA = 25° C
-
- 100 μA VR = 2.0 V, TA = 25° C
VCC
Operating DC Supply Voltage
Low Level Supply Current:
Buffered Totem-Pole Output(5)(6)
ICCL
Buffered Open-Collector Output(5)(6)
Inverted Totem-Pole Output(5)
Inverted Open-Collector Output(5)
4.75 - 5.25 V
-
- 10 mA Vcc = 5.25 V, If = 0 mA (output open)
-
- 10 mA
-
-
-
-
10
10
mA
mA
Vcc = 5.25 V, If = 25 mA (output open)
High Level Supply Current:
Buffered Totem-Pole Output(5)(6)
ICCH
Buffered Open-Collector Output(5)
Inverted Totem-Pole Output(5)(6)
Inverted Open-Collector Output(5)(6)
-
-
-
-
10
10
mA
mA
Vcc = 5.25 V, If = 25 mA (output open)
-
-
-
-
10
10
mA
mA
Vcc = 5.25 V, If = 0 mA (output open)
High Level Output Current:
IOH
Buffered Open-Collector Output
Inverted Open-Collector Output
-
-
-
-
100
100
μA
μA
Vcc = 4.5 V, If = 25 mA, VOH = 30 V, TA=25°C
-
- 100 μA Vcc = 4.5 V, If = 0 mA, VOH = 30 V, TA = 25°C
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
(2) Derate linearly 2.22 mW/°C above 25° C.
(3) Derate linearly 4.44 mW/°C above 25° C.
(4) Derate linearly 6.66 mW/°C above 25° C.Normal application would be with light source blocked, simulated by IF=0 mA.
(5) Tested at d = 0.080” (mm) from a 90% diffuse white test surface.
(6) Normal application would be with light source blocked, simulated by IF = 0 mA.
(7) All parameters tested using pulse technique.
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue C 05/2016 Page 4