MRFE6VP61K25HR6(2010) 查看數據表（PDF） - Freescale Semiconductor

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MRFE6VP61K25HR6
(Rev.:2010)

RF Power Field Effect Transistors

Freescale Semiconductor 

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2 (Minimum)

Machine Model (per EIA/JESD22--A115)

B (Minimum)

Charge Device Model (per JESD22--C101)

IV (Minimum)

Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics (1)

Gate--Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

Drain--Source Breakdown Voltage

(VGS = 0 Vdc, ID = 100 mA)

Zero Gate Voltage Drain Leakage Current

(VDS = 50 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 100 Vdc, VGS = 0 Vdc)

IGSS

—

—

V(BR)DSS

125

—

IDSS

—

—

IDSS

—

—

1

μAdc

—

Vdc

10

μAdc

20

μAdc

On Characteristics

Gate Threshold Voltage (1)

(VDS = 10 Vdc, ID = 1776 μAdc)

Gate Quiescent Voltage

(VDD = 50 Vdc, ID = 100 mAdc, Measured in Functional Test)

Drain--Source On--Voltage (1)

(VGS = 10 Vdc, ID = 2 Adc)

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Output Capacitance

(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Input Capacitance

(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)

VGS(th)

1.7

2.2

2.7

Vdc

VGS(Q)

1.4

2.2

2.9

Vdc

VDS(on)

—

0.15

—

Vdc

Crss

—

2.8

—

pF

Coss

—

185

—

pF

Ciss

—

562

—

pF

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 1250 W Peak (250 W Avg.), f = 230 MHz,

Pulsed, 100 μsec Pulse Width, 20% Duty Cycle

Power Gain

Drain Efficiency

Gps

23.0

24.0

26.0

dB

ηD

72.5

74.0

—

%

Input Return Loss

IRL

—

--14

--10

dB

Pulsed RF Performance (In Freescale Application Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 1250 W Peak

(250 W Avg.), f = 230 MHz, Pulsed, 100 μsec Pulse Width, 20% Duty Cycle

Load Mismatch

(VSWR 65:1 at all Phase Angles)

Ψ

No Degradation in Output Power

1. Each side of device measured separately.

MRFE6VP61K25HR6 MRFE6VP61K25HSR6

2

RF Device Data

Freescale Semiconductor

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