MTD6N10E 查看數據表（PDF） - ON Semiconductor

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MTD6N10E

TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount

ON Semiconductor 

MTD6N10E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 μAdc)

Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

(VDS = 100 Vdc, VGS = 0 Vdc)

(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 μAdc)

Temperature Coefficient (Negative)

Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 3.0 Adc)

Drain−Source On−Voltage (VGS = 10 Vdc)

(ID = 6.0 Adc)

(ID = 3.0 Adc, TJ = 125°C)

Forward Transconductance (VDS = 13 Vdc, ID = 3.0 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (2)

Turn−On Delay Time

Rise Time

Turn−Off Delay Time

Fall Time

(VDD = 50 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

Gate Charge

(See Figure 8)

(VDS = 80 Vdc, ID = 6.0 Adc,

VGS = 10 Vdc)

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (1)

(IS = 6.0 Adc, VGS = 0 Vdc)

(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)

Reverse Recovery Time

(See Figure 14)

(IS = 6.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/μs)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

Symbol

V(BR)DSS

IDSS

IGSS

VGS(th)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

trr

ta

tb

QRR

LD

LS

Min

Typ

Max

Unit

100

—

—

124

—

Vdc

—

mV/°C

μAdc

—

—

10

—

—

100

—

—

100

nAdc

2.0

3.2

4.0

Vdc

—

4.0

—

mV/°C

—

0.29

0.4

Ohm

Vdc

—

1.75

2.9

—

—

2.5

1.5

2.4

—

mhos

—

310

420

pF

—

120

210

—

25

50

—

8.0

15

ns

—

31

49

—

13

31

—

12

27

—

10

14

nC

—

3.3

—

—

4.3

—

—

5.5

—

Vdc

—

0.98

2.0

—

0.9

—

—

86.7

—

ns

—

64

—

—

22.7

—

—

0.327

—

μC

—

4.5

—

nH

—

7.5

—

nH

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