PZT2222A-C 查看數據表（PDF） - Secos Corporation.
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PZT2222A-C Datasheet PDF : 3 Pages
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Elektronische Bauelemente
PZT2222A-C
NPN Silicon
Silicon Planar Medium Power Transistor
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Collector-Base Breakdown Voltage
V(BR)CBO
75
-
-
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
-
-
Emitter-Base Breakdown Voltage
V(BR)EBO
6
-
-
Collector Cut-off Current
ICBO
-
-
10
Emitter Cut-off Current
ICEX
-
-
10
Collector Cut-off current
IEBO
-
-
10
-
Collector-Emitter Saturation Voltage
VCE(sat)
-
-
1
-
0.3
Base-Emitter Voltage
-
-
2
VBE(sat)
-
-
1.2
35
-
-
50
-
-
DC Current Gain
75
-
-
hFE
100
-
300
50
-
-
40
-
-
Transition Frequency
fT
300
-
-
Collector Output Capacitance
COB
-
8
-
Unit
Test Conditions
V IC=10uA, IE=0
V IC=10mA, IB=0
V IE=10µA, IC=0
nA VCB=60V, IE=0
nA VCE=60V, VBE(off)= -3V
nA VEB=3V, IC=0
V IC=500mA, IB=50mA
V IC=150mA, IB =15mA
V IC=500mA, IB=50mA
V IC=150mA, IB=15mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=1V, IC=150mA
MHz
pF
VCE=10V, IC=500mA
VCE=20V, IC=20mA, f=100MHz
f=100MHz
VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
15-Dec-2017 Rev. F
Any changes of specification will not be informed individually.
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