4N29S 查看數據表（PDF） - Fairchild Semiconductor
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4N29S Datasheet PDF : 13 Pages
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Typical Performance Curves (Continued)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
Fig. 7 CTR vs. RBE (Unsaturated)
(Black Package)
IF = 20 mA
VCE= 5.0 V
IF = 10 mA
IF = 5 mA
100
1000
RBE- BASE RESISTANCE (kΩ)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
Fig. 9 CTR vs. RBE (Saturated)
(Black Package)
IF = 20 mA
VCE= 0.3 V
IF = 10 mA
IF = 5 mA
100
1000
RBE- BASE RESISTANCE (k Ω)
Fig. 11 Collector-Emitter Saturation Voltage vs Collector Current
(Black Package)
100
10
Fig. 8 CTR vs. RBE (Unsaturated)
(White Package)
1.0
0.9
IF = 20 mA
0.8
IF = 10 mA
0.7
0.6
IF = 5 mA
0.5
0.4
0.3
0.2
VCE= 5.0 V
0.1
0.0
10
100
1000
RBE- BASE RESISTANCE (kΩ)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
Fig. 10 CTR vs. RBE (Saturated)
(White Package)
IF = 20 mA
VCE= 0.3 V
IF = 10 mA
IF = 5 mA
100
1000
RBE- BASE RESISTANCE (k Ω)
Fig. 12 Collector-Emitter Saturation Voltage vs Collector Current
(White Package)
100
TA = 25˚C
10
1
IF = 2.5 mA
0.1
0.01
IF = 5 mA
IF = 10 mA
IF = 20 mA
TA = 25˚C
0.001
0.01
0.1
1
10
IC - COLLECTOR CURRENT (mA)
1
IF = 2.5 mA
0.1
0.01
IF = 5 mA
IF = 10 mA
IF = 20 mA
0.001
0.01
0.1
1
10
IC - COLLECTOR CURRENT (mA)
©2006 Fairchild Semiconductor Corporation
4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1
5
www.fairchildsemi.com
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