MMBT2907ALT1G(2013) 查看數據表（PDF） - ON Semiconductor
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MMBT2907ALT1G Datasheet PDF : 6 Pages
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MMBT2907AL, SMMBT2907AL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 5)
(IC = −1.0 mAdc, IB = 0)
(IC = −10 mAdc, IB = 0)
Collector −Base Breakdown Voltage (IC = −10 mAdc, IE = 0)
Emitter −Base Breakdown Voltage (IE = −10 mAdc, IC = 0)
Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
Collector Cutoff Current
(VCB = −50 Vdc, IE = 0)
(VCB = −50 Vdc, IE = 0, TA = 125°C)
Base Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
ON CHARACTERISTICS
DC Current Gain
(IC = −0.1 mAdc, VCE = −10 Vdc)
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −150 mAdc, VCE = −10 Vdc)
(IC = −500 mAdc, VCE = −10 Vdc) (Note 5)
Collector −Emitter Saturation Voltage (Note 5)
(IC = −150 mAdc, IB = −15 mAdc) (Note 5)
(IC = −500 mAdc, IB = −50 mAdc)
Base −Emitter Saturation Voltage (Note 5)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Notes 5, 6),
(IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz)
Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn−On Time
Delay Time
Rise Time
(VCC = −30 Vdc, IC = −150 mAdc,
IB1 = −15 mAdc)
Turn−Off Time
Storage Time
Fall Time
(VCC = −6.0 Vdc, IC = −150 mAdc,
IB1 = IB2 = −15 mAdc)
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
6. fT is defined as the frequency at which |hfe| extrapolates to unity.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
IBL
hFE
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
ton
td
tr
toff
ts
tf
Min
−60
−60
−60
−5.0
−
−
−
−
75
100
100
100
50
−
−
−
−
200
−
−
−
−
−
−
−
−
Max
Unit
−
−
−
−
−50
−0.010
−10
−50
Vdc
Vdc
Vdc
nAdc
mAdc
nAdc
−
−
−
−
300
−
Vdc
−0.4
−1.6
Vdc
−1.3
−2.6
−
MHz
8.0
pF
30
45
10
40
ns
100
80
30
INPUT
Zo = 50 W
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
0
-16 V
1.0 k
50
-30 V
200
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
INPUT
Zo = 50 W
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
0
-30 V
+15 V -6.0 V
1.0 k 37
1.0 k
50
1N916
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
200 ns
200 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
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