MJE13005D 查看數據表（PDF） - Inchange Semiconductor
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MJE13005D Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
Silicon NPN Power Transistor
Product Specification
MJE13005D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;IB= 0
MIN TYP MAX UNIT
400
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ;IC= 0
9
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.5A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.5A
1.5
V
ICBO
Collector Cutoff Current
VCB= 700V; IE= 0
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 9V; IC= 0
0.1 mA
hFE-1
DC Current Gain
IC= 5mA ; VCE= 5V
10
hFE-2
DC Current Gain
IC= 1A ; VCE= 5V
10
40
fT
Current Gain-Bandwidth Product
IC= 0.5A;VCE= 10V; ftest= 1MHz
7
MHz
VECF
C-E Diode Forward Voltage
IF= 4A
2.0
V
Switching Times
ts
Storage Time
IC= 0. 25A
6.0 μs
tf
Fall Time
IC= 0. 5A
0.6 μs
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