2N5018 查看數據表（PDF） - Linear Integrated System

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2N5018

SINGLE P-CHANNEL JFET SWITCH

Linear Integrated System 

Linear Integrated Systems

2N5018 SERIES

SINGLE P-CHANNEL

JFET SWITCH

FEATURES

DIRECT REPLACEMENT FOR SILICONIX 2N5018

ZERO OFFSET VOLTAGE

LOW ON RESISTANCE

75Ω

ABSOLUTE MAXIMUM RATINGS1

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

-55 to 200°C

Junction Operating Temperature

-55 to 200°C

Maximum Power Dissipation

Continuous Power Dissipation

500mW

Maximum Currents

Gate Current

-50mA

Maximum Voltages

Gate to Drain

30V

Gate to Source

30V

TO-18

BOTTOM VIEW

G 2 3D

S1

STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)

SYM. CHARACTERISTIC

2N5018

2N5019

TYP

MIN MAX MIN MAX

BVGSS Gate to Source Breakdown Voltage

VGS(off) Gate to Source Cutoff Voltage

VDS(on)

IDSS

IGSS

Drain to Source On Voltage

Drain to Source Saturation Current2

Gate Leakage Current

ID(off) Drain Cutoff Current

30

30

10

5

-0.5

-0.5

-10

-5

2

2

-10

-10

-10

-10

IDGO

rDS(on)

Drain Reverse Current

Drain to Source On Resistance

-2

-2

75

150

UNITS

V

mA

nA

µA

nA

Ω

CONDITIONS

IG = 1µA, VDS = 0V

VDS = -15V, ID = -1µA

VGS = 0V, ID = -6mA

VGS = 0V, ID = -3mA

VDS = -20V, VGS = 0V

VGS = 15V, VDS = 0V

VDS = -15V, VGS = 12V

VDS = -15V, VGS = 7V

VDG = -15V, IS = 0A

ID = -1mA, VGS = 0V

Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

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