2SD1546 查看數據表（PDF） - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SD1546 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V
COB
Output Capacitance
tf
Fall Time
IE= 0; VCB= 10V; ftest= 1.0MHz
ICP= 3A, IB1(end)= 0.8A
2SD1546
MIN TYP. MAX UNIT
5.0
V
1.5
V
10 μA
1.0 mA
8
3
MHz
165
pF
0.5 1.0 μs
SPTECH website：www.superic-tech.com
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