2SC3182 查看數據表（PDF） - New Jersey Semiconductor
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2SC3182 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC3182
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 50mA; IB= 0
140
V
VcE(sat) Collector-Emitter Saturation Voltage lc= 7A; IB= 0.7A
2.0
V
VBE(OH)
Base-Emitter On Voltage
ICBO
Collector Cutoff Current
lc= 5A; VCE= 5V
VCB=140V;IE=0
1.5
V
5
uA
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
5
uA
hpE-1
DC Current Gain
lc= 1A;VCE=5V
55
160
hFE-2
DC Current Gain
lc= 5A; Vce= 5V
35
COB
Output Capacitance
lE=0;VCB=10V;ftest= 1.0MHz
fi
Current-Gain—Bandwidth Product
lc=1A;VCE=5V
220
PF
30
MHz
• hpE-1 Classifications
R
0
55-110 80-160
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