155N3LH6 查看數據表（PDF） - STMicroelectronics

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155N3LH6

N-channel 30 V, 2.4 mΩ , 80 A, D²PAK, DPAK STripFET™VI DeepGATE™ Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STB155N3LH6, STD155N3LH6

(TCASE = 25 °C unless otherwise specified).

Table 5. Static

Symbol

Parameter

V(BR)DSS

Drain-source breakdown

voltage (VGS= 0)

IDSS

Zero gate voltage drain

current (VGS = 0)

IGSS

VGS(th)

Gate body leakage current

(VDS = 0)

Gate threshold voltage

RDS(on)

Static drain-source on

resistance

Test conditions

ID = 250 µA

VDS = 30 V

VDS = 30 V,Tc = 125 °C

VGS = ± 20 V

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = 40 A

VGS = 5 V, ID = 40 A

Min. Typ.

30

1

2.4

3.2

Max. Unit

V

1 µA

10 µA

±100 nA

2.5 V

3.0 mΩ

4.0 mΩ

Table 6. Dynamic

Symbol

Parameter

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

RG Gate input resistance

Test conditions

VDS = 25 V, f=1 MHz,

VGS = 0

VDD = 15 V, ID = 80 A

VGS = 10 V

(see Figure 14)

f = 1 MHz gate bias

Bias = 0 test signal

level = 20 mV

open drain

Min Typ. Max. Unit

3800

pF

-

725

- pF

420

pF

80

nC

-

15

- nC

15

nC

-

1.5

-

Ω

4/18

Doc ID 17893 Rev 3

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