BSP324H6327 查看數據表（PDF） - Infineon Technologies

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BSP324H6327

SIPMOS® Power-Transistor

Infineon Technologies 

Rev. 1.0

BSP324

Thermal Characteristics

Parameter

Characteristics

Thermal resistance, junction - soldering point

(Pin 4)

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

Symbol

Values

Unit

min. typ. max.

RthJS

RthJA

-

16 25 K/W

-

85 115

-

45 70

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=250µA

Gate threshold voltage, VGS = VDS

ID=94µA

Zero gate voltage drain current

VDS=400V, VGS=0, Tj=25°C

VDS=400V, VGS=0, Tj=125°C

V(BR)DSS 400

-

-V

VGS(th)

1.3 1.9 2.3

IDSS

µA

- 0.01 0.1

-

-

10

Gate-source leakage current

VGS=20V, VDS=0

Drain-source on-state resistance

VGS=4.5V, ID=0.05A

Drain-source on-state resistance

VGS=10V, ID=0.17A

IGSS

RDS(on)

RDS(on)

-

10 100 nA

- 14.3 22 Ω

- 13.6 25

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (single layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Page 2

2003-02-21

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