IRF120 查看數據表（PDF） - Inchange Semiconductor
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IRF120 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF120
DESCRIPTION
·Drain Current ID=8A@ TC=25℃
·Drain Source Voltage-
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) =0.3Ω(Max)
·Nanosecond Switching Speeds
APPLICATIONS
·Switching power supplies
·Motor controls,Inverters and Choppers
·Audio amplifiers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
100
V
±20
V
Drain Current-continuous@ TC=25℃
8
A
Total Dissipation@TC=25℃
40
W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
3.12
30
℃/W
℃/W
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