CPV362M4FPBF 查看數據表（PDF） - Vishay Semiconductors
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CPV362M4FPBF Datasheet PDF : 9 Pages
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2.0 RG = 50 Ω
TJ = 150 °C
VCC = 480 V
1.5 VGE = 15 V
1.0
0.5
0.0
0
2
4
6
8
10
IC - Collector to Emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector to Emitter Current
100
VGE = 20 V
TJ = 125 °C
Safe operating area
10
CPV362M4FPbF
Vishay Semiconductors
100
VR = 200 V
TJ = 125 °C
80 TJ = 25 °C
60
40
IF = 4.0 A
20
IF = 16 A
IF = 8.0 A
0
100
1000
dIF/dt (A/µs)
Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt
100
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 16 A
10 IF = 8.0 A
1
1
10
100
1000
VCE - Collector to Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
IF = 4.0 A
1
100
1000
dIF/dt - (A/µs)
Fig. 15 - Typical Recovery Current vs. dIF/dt
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
VFM - Forward Voltage Drop
Fig. 13 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
500
VR = 200 V
TJ = 125 °C
400 TJ = 25 °C
300
IF = 16 A
200
IF = 8.0 A
100
IF = 4.0 A
0
100
1000
dIF/dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dIF/dt
Revision: 10-Jun-15
5
Document Number: 94361
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