2N4919 查看數據表（PDF） - ON Semiconductor
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2N4919 Datasheet PDF : 5 Pages
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2N4918 − 2N4920* Series
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.07
0.01
0.05
0.03 SINGLE PULSE
0.02
0.01
0.01 0.02 0.03 0.05 0.1
qJC(t) = r(t) qJC
P(pk)
qJC = 4.16°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
t, TIME (ms)
Figure 4. Thermal Response
100 200 300 500 1000
10
5.0
5.0 ms
1.0 ms
100 ms
2.0
TJ = 150°C
dc
1.0
SECOND BREAKDOWN LIMITED
0.5
BONDING WIRE LIMITED
THERMALLY LIMIT @ TC = 25°C
0.2 PULSE CURVES APPLY BELOW
RATED VCEO
0.1
1.0
2.0 3.0 5.0 7.0 10
20 30 50
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
70 100
Figure 5. Active−Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
10
IC/IB = 20
IC/IB = 10
ts′ = ts − 1/8 tf
TJ = 25°C
TJ = 150°C
IB1 = IB2
20 30 50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
Figure 6. Storage Time
500 700 1000
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
10
IC/IB = 20
IC/IB = 10
TJ = 25°C
TJ = 150°C
VCC = 30 V
IB1 = IB2
20 30 50 70 100 200 300 500 700 1000
IC, COLLECTOR CURRENT (mA)
Figure 7. Fall Time
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