STZTA92 查看數據表（PDF） - STMicroelectronics

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STZTA92

MEDIUM POWER AMPLIFIER

STMicroelectronics 

STZTA92

THERMAL DATA

Rthj-amb • Thermal Resistance Junction-Ambient

Rthj-tab • Thermal Resistance Junction-Collecor Tab

• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm

Max

Max

62.5

8

oC/W

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol

Parameter

Test Conditions

ICBO

V(BR)CBO

Collector Cut-off

Current (IE = 0)

Collector-Base

Breakdown Voltage

(IE = 0)

VCB = -200 V

IC = -100 µA

V(BR)CEO∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

V(BR)EBO Emitter-Base

Breakdown Voltage

(IC = 0)

VCE(sat)∗ Collector-Emitter

Saturation Voltage

IC = -1 mA

IE = -100 µA

IC = -20 mA IB = -2 mA

VBE(sat)∗ Base-Emitter

Saturation Voltage

IC = -20 mA IB = -2 mA

hFE∗ DC Current Gain

IC = -1 mA

IC = -10 mA

IC = -30 mA

VCE = -10 V

VCE = -10 V

VCE = -10 V

fT

Transition Frequency IC = -10 mA VCE = -20 V f = 50 MHz

CCEO

Collector Emitter

Capacitance

VCE = -20 V f = 1 MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %

Min.

-300

-300

-5

25

40

40

50

50

Typ.

Max.

-100

-0.5

-0.9

Unit

nA

V

V

V

V

V

MHz

pF

2/4

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