BTB41-600B 查看數據表（PDF） - Inchange Semiconductor
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BTB41-600B Datasheet PDF : 1 Pages
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isc Thyristors
BTB41-600B
DESCRIPTION
·With TO-P3 packaging
·Operating in 4 quadrants
·High commutation capability
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Solid state relays;heating and cooking appliances
·Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM
VRRM
IT(RSM)
ITSM
PG(AV)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
@Tc=90℃
Surge non-repetitive on-state current
50HZ
60HZ
Average gate power dissipation ( over any 20 ms period )
Tj
Operating junction temperature
Tstg Storage temperature
MAX
UNIT
600
V
600
V
40
A
400
420
A
1.0
W
-40~125 ℃
-40~150 ℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
IRRM
Repetitive peak reverse current VR=VRRM Rated;
IDRM Repetitive peak off-state current VD=VDRM Rated;
Tj=25℃
Tj=125℃
0.005
5
mA
VTM On-state voltage
IGT
Gate-trigger current
VGT
Rth (j-c)
Gate-trigger voltage
Junction to case
IT=60A
VD =12V;RG=33Ω
VD =12V;RG=33Ω
Half cycle
1.55
V
Ⅰ
50
Ⅱ
Ⅲ
50
50
mA
Ⅳ
100
1.3
V
0.9 ℃/W
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