IRFR220R 查看數據表（PDF） - Kersemi Electronic Co., Ltd.

零件编号

产品描述 (功能)

生产厂家

IRFR220R

Power MOSFET

Kersemi Electronic Co., Ltd. 

IRFR220, IRFU220, SiHFR220, SiHFU220

D.U.T

+

-

Peak Diode Recovery dV/dt Test Circuit

+

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

-

-

+

RG

• dV/dt controlled by RG

+

• ISD controlled by duty factor "D"

• D.U.T. - device under test

- VDD

Driver gate drive

P.W.

Period

D=

P.W.

Period

VGS = 10 V*

D.U.T. ISD waveform

Reverse

recovery

Body diode forward

current

current

dI/dt

D.U.T. VDS waveform

Diode recovery

dV/dt

VDD

Re-applied

voltage

Body diode

Inductor current

Forward Drop

Ripple ≤ 5 %

ISD

* VGS = 5 V for logic level and 3 V drive devices

Fig. 14 - For N-Channel

www.kersemi.com

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